Edgeless planar semiconductor sensors for a Medipix3-based radiography detector
نویسندگان
چکیده
منابع مشابه
Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades
The development of n-on-p ‘‘edgeless’’ planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the ‘‘active edge’’ technology, based on a deep etched trench, sui...
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In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of no...
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ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2011
ISSN: 1748-0221
DOI: 10.1088/1748-0221/6/11/c11019